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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION With TO-220Fa package Complement to type 2SB949/949A High DC current gain High-speed switching APPLICATIONS For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO INC Collector-base voltage E SEM ANG H 2SD1275 2SD1275A 2SD1275 Open base 2SD1275A OND IC CONDITIONS TOR UC VALUE 60 80 60 UNIT Open emitter V Collector-emitter voltage V 80 VEBO IC ICM Emitter-base voltage Collector current Collector current-Peak Open collector 5 2 4 V A A TC=25ae PC Collector power dissipation Ta=25ae Tj Tstg Junction temperature Storage temperature 35 W 2 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD1275 IC=30mA , IB=0 2SD1275A VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage 2SD1275 2SD1275A Collector ICEO cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current 2SD1275A VCE=40V; IB=0 VEB=5V; IC=0 2SD1275 IC=2A; IB=8mA VCE=4V; IC=2A VCB=60V; IE=0 CONDITIONS 2SD1275 2SD1275A SYMBOL MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 2.8 V V ICBO Collector cut-off current 1.0 VCB=80V; IE=0 VCE=30V; IB=0 2.0 mA mA IN DC current gain DC current gain Transition frequency Switching times ton ts tf ANG CH MIC E SE IC=2A ; VCE=4V IC=2A ;IB1=8mA IB2=-8mA;VCC=50V IC=1A ; VCE=4V DUC ON 1000 2000 TOR 2.0 10000 mA IC=0.5A; VCE=10V;f=1MHz 20 MHz Turn-on time Storage time Fall time 0.5 4.0 1.0 |I |I |I s s s hFE-2 Classifications Q 2000-5000 R 4000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A PACKAGE OUTLINE CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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